DC-40 GHz bandwidth 10 ps rise time Low insertion and return loss 2 mils of tip-to-tip compliance High probing angle and clearance

Enables wafer probing up to 100 A pulsed and 10A DC Innovative multi-fingertip design provides even distribution of current Supports up to 500 V Replaceable Tungsten probe tips Temperature range of -60°C to 300°C Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks Prevents against thermal runaway Measure devices on wafer at higher currents than ever before Small scrub minimizes damage to aluminum pad Small footprint – tip fits on a 1 mm pad

Coaxial and triaxial measurements up to 10,000 V High-quality construction with low-noise electrical performance Replaceable probe tips in a variety of tip sizes Temperature range of of -60°C to 300°C Triaxial measurement ensures a much better understanding of device leakage in the off state Highly reliable, stable and repeatable measurements Integrally designed as part of a complete measurement solution

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight SPA for On-wafer DC Parametric Measurements

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight A-LFNA for On-wafer R&D Advanced Low-Frequency Noise Measurements

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PNA for On-wafer R&D Measurements from RF to millimeter wave to Terahertz

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PDA for On-wafer R&D Power Semiconductor Device Characterization Measurements

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight Photonics Application

Lithographic thin-film construction Excellent crosstalk characteristics Non-oxidizing nickel alloy tips Innovative force delivery mechanism 40GHz, 50GHz, 67GHz, 110GHz and 145GHz connectors available GSG, SG, GS, GSGSG, GSSG, SGS configurations 50 to 250 µm pitches (other pitches available on request) High current version (2 A) available Advantages

Probe loss is 3 dB typical between 140 and 200 GHz, S11/S22 15 dB typical Reduced unwanted couplings and transmission modes Able to shrink pad geometries to 25 x 35 µm (best case) Typical contact resistance < 0.05 Ω on Al, < 0.02 Ω on Au WR15, WR12, WR10, WR8, WR6, WR4, WR3, and WR2 bands available.

Customizable configuration up to 25 contacts: RF, Eye-Pass power, ground, logic Lithographically-defined tips allow automated over temperature measurement on pads as small as 30 µm x 50 µm Low and repeatable contact resistance on aluminum pads (< 0.05 Ω) ensures accurate results Durable probe structure ensures more than 250,000 contacts Able to measure from -40°C to +125°C without compromising performance or accuracy of specifications

Next Generation Wafer Probing Continues the Infinity family’s Industry leading electrical performance High temperature capability (175° C +) for automotive device characterization and other applications Better tip visibility for enhanced placement accuracy and repeatability Improved tip life/durability with solid rhodium contacts New tip architecture enables support for narrower pitches (e.g. 25um) Advanced mechanical design combined with small contacts enables probing on smaller pads/pitches and improves durability and robustness