
Test & Measurement
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Products
- Enables wafer probing up to 100 A pulsed and 10A DC
- Innovative multi-fingertip design provides even distribution of current
- Supports up to 500 V
- Replaceable Tungsten probe tips
- Temperature range of -60°C to 300°C
- Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
- Prevents against thermal runaway
- Measure devices on wafer at higher currents than ever before
- Small scrub minimizes damage to aluminum pad
- Small footprint – tip fits on a 1 mm pad
- Coaxial and triaxial measurements up to 10,000 V
- High-quality construction with low-noise electrical performance
- Replaceable probe tips in a variety of tip sizes
- Temperature range of of -60°C to 300°C
- Triaxial measurement ensures a much better understanding of device leakage in the off state
- Highly reliable, stable and repeatable measurements
- Integrally designed as part of a complete measurement solution
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight SPA for On-wafer DC Parametric Measurements
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight A-LFNA for On-wafer R&D Advanced Low-Frequency Noise Measurements
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PNA for On-wafer R&D Measurements from RF to millimeter wave to Terahertz
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PDA for On-wafer R&D Power Semiconductor Device Characterization Measurements
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight Photonics Application
- Lithographic thin-film construction
- Excellent crosstalk characteristics
- Non-oxidizing nickel alloy tips
- Innovative force delivery mechanism
- 40GHz, 50GHz, 67GHz, 110GHz and 145GHz connectors available
- GSG, SG, GS, GSGSG, GSSG, SGS configurations
- 50 to 250 µm pitches (other pitches available on request)
- High current version (2 A) available
Advantages
- Superior field confinement reduces unwanted couplings to nearby devices and transmission modes
- Superior measurement accuracy and repeatability
- Small scrub minimizes damage to aluminum pad
- Typical contact resistance < 0. 05 Ω on Al, <0.02Ω on Au
- Save valuable wafer space and reduce pad parasitics by being able to shrink pad geometries to 25 x 35 µ m (best case)