Test & Measurement
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Substrate material: High-resistivity silicon
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Substrate thickness: 275 µm
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Dielectric constant: 11.8
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Nominal Z0: 50 Ω
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Die-to-die stepping time of under 100 ms
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Up to 20 dies/sec (70,000 dies/hour) with MultiDie Testing technology
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Even extreme variations in height, such as the case with warped wafers, can be compensated
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Interfaces to all major analysis instrumentation, optics software and testers
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Access to top side and bottom side of device under test (DUT)
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Highly accurate light measurement
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Test automation out-of-cassette for 24/7 operation
See more Key Features on Specifications & Details tab
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Different substrate carriers for wafers up to 200 mm or single dies
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Probe cards and/or up to eight positioners
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Ice- and condensation-free probing down to 77 K (liquid nitrogen) or below 20 K (liquid helium)
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Probe positioners placed inside vacuum chamber
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Joystick controller
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Manual probe positioners with rotary feed-throughs
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User-centered design minimizes training costs and enhances efficiency
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Comprehensive alignment functions – from simple wafer alignment and mapping to automated alignment and test of multiple singulated chips, like IR – Focal Plane Arrays
See more Key Features on Specifications & Details tab
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Different substrate carriers for wafers up to 200 mm or single dies
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Probe cards and/or up to eight positioners
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Probe positioners placed inside vacuum chamber
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Short and stable probe arms
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Joystick controller
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Manual probe positioners with rotary feed-throughs
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Software control of chuck for fast step-and-repeat testing of the entire wafer
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Fast step-and-repeat testing of the whole wafer
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User-centered design minimizes training costs and enhances efficiency
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Different substrate carriers for wafers up to 200 mm or single dies
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Probe cards and/or up to eight positioners
-
Probe positioners placed inside vacuum chamber
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Short and stable probe arms
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Joystick controller
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Manual probe positioners with rotary feed-throughs
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Software control of chuck for fast step-and-repeat testing of the entire wafer
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Fast step-and-repeat testing of the whole wafer
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User-centered design minimizes training costs and enhances efficiency
See more Key Features on Specifications & Details tab
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Different substrate carriers for wafers up to 100 mm or single dies
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Up to six positioners
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Independently cooled cold shield
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Probe positioners placed inside vacuum chamber
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Ergonomic and straightforward design
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Simple microscope operation
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Independent control of linear chuck stage and positioners
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Contact/separation stroke for probe platen
See more Key Features on Specifications & Details tab
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Different substrate carriers for wafers up to 150 mm or single dies
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Up to six positioners
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Probe positioners placed inside vacuum chamber
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Short and stable probe arms
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Ergonomic and straightforward design
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Intuitive, manual operation
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Independent control of linear chuck stage and positioners
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Contact/separation stroke for probe platen
See more Key Features on Specifications & Details tab
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Highly stable granite base
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Independent, coarse movement of X and Y axes, combined with easy fine adjustments
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Re-configurable for DC, RF, mmW, FA, WLR and more
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Full thermal range of -60°C to +300°C
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Low-profile, straightforward design
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Spacious top chambers for up to 12 positioners
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Reduces electrical noise by providing a fully electromagnetically shielded, ultra-low-noise, light-tight environment
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Enables accurate low-noise measurements of atto amperes, femtofarads and microvolts at temperatures down to -60°C
See more Key Features on Specifications & Details tab