Low output capacitance High bandwidth up to 30kHz High resolution I-V curve simulates static and dynamic conditions

Ruggedized Wide (Global) Input On-Line Battery Back-Up Transient (Spike) Suppression Surge Suppression

Integrated subsystem test SAS, BSS, Umbilical systems AC Input isolation

Near Linear Power Supply Modular ≥0.95 PFC Digital control loop technology High Power Density (3.5 watts/cubic inch)

High Voltage (500V) Input Digital control loop technology Two models: 375W & 750W Up to 750W/500V

High Power Density (2 VA/cubic inch) Single or multi-phase output Parallel operation 4.8 Crest factor Digital control loop technology

Modular Control up to 95 assets Control multiple AC and DC power supplies and loads in one mainframe Create “virtual assets”

10/100 base-T Ethernet connectivity Digital control loop technology IVI compliant drivers Web browser control

Spin mode is a dynamic mode intended to provide a simulation of a spinning satellite. Enhanced Eclipse mode is a dynamic mode that allows the user to easily program and initiate an eclipse event with total control over all of the V-I curve parameters and dwell times.

Bias tees with a perfect balance of RF performance and DC power handling Auriga’s Bias Tees balance impressive RF performance with heavy-duty power handling across multiple frequency bands ranging from 100 MHz to 67 GHz. They are designed for rigorous usage without sacrificing RF performance. Only the highest-quality materials are used to minimize signal loss and enable efficient heat removal.

Introducing Auriga’s 5th generation pulsed IV/RF characterization system delivers unparalleled performance, capturing measurements with incredible speed and accuracy. Pulsed IV (current-voltage) measurements have emerged as the preferred method of capturing current-voltage characteristics of active devices such as field effect (FETs) and bipolar junction (BJTs) transistors. With the growing popularity of higher-power devices, like GaN HEMTs, LDMOS, SiC, and graphene, current and voltage requirements are constantly being pushed higher and higher.

Non-linear measurement data is often used to create a behavioral model for high frequency components. Formulations of these models have been defined in terms of traveling waves, with a desire to represent nonlinear behavior of high frequency transistors through a direct extension from linear s-parameters.