Focus Microwaves - On-Wafer Delta Tuners
More Product Information
The Focus Compact Model (FCM) utility is a streamlined software package designed to be used with Focus’ AURIGA high-end Pulsed-IV system, that is used to generate Compact Models for transistors from their Pulsed-IV and wideband pulsed s-parameter data.
This is achieved by generating a network of lumped circuit elements that represent accurately the fundamental linear & non-linear behavior of the device over a broad range of bias and power range.
The result of the modeling is a netlist and compatible with- the most common CAD tools used in RF Design; such as AWR Microwave office (MWO) and Keysight PathWave Advanced Design System (ADS).
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Multi-purpose SIGMA instrument integration kit
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Shorter cabling and universal chuck connection
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Triax probe with protected guard
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Triax design for low-leakage measurements up to 3 kV
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Special chuck surface coating
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High-isolation ready
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Arcing protection
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Shield Enclosure with interlock
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Advanced grounding concept
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- Tiny “all-in-one” solution: no external control board needed
- Superior image quality: sub-micron lens movement with very low tilt. Now with higher dynamic stability
- Low voltage & power: 3.3 VDC input, zero power position hold
- Simple system integration: accepts high-level motion commands over standard serial interface (I2C or SPI)
- Flexible, production-ready system: compatible with M8 to M16 lenses and with typical image formats from 1/3” to 1/1.8”
- Lowest cost, fastest time to market: Fully-engineered “plug and play” solution
The low frequency tuners are a unique product technology using MPT algorithms for low frequency wideband tuning. Three or more cascaded tuning sections use series transmission cables and parallel rotary capacitors.
The length of the cables and number of tuning sections are optimized for maximum tuning range over a given bandwidth. HLFT tuners use 6 tuning sections allowing second harmonic frequency tuning.
Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight A-LFNA for On-wafer R&D Advanced Low-Frequency Noise Measurements
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Infinity Probe: best for Al (Si)
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ACP Probe: best for AU (III-Vs)
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|Z| Probe: robust solution (long lifetime)
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RF chuck ±3 μm surface planarity
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Unique 500 μm platen contact/ separation stroke with ≤± 1 μm accuracy for repeatable contact
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Exclusive 1-, 2-, 3-, and 4-port on-wafer calibration algorithms
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Automated calibration monitoring
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Superior field confinement reduces unwanted couplings to nearby devices and transmission modes
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Superior measurement accuracy and repeatability
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Small scrub minimizes damage to aluminum pad
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Typical contact resistance < 0. 05 Ω on Al, <0.02Ω on Au
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Save valuable wafer space and reduce pad parasitics by being able to shrink pad geometries to 25 x 35 µ m (best case)
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Different substrate carriers for wafers up to 100 mm or single dies
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Up to six positioners
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Independently cooled cold shield
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Probe positioners placed inside vacuum chamber
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Ergonomic and straightforward design
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Simple microscope operation
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Independent control of linear chuck stage and positioners
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Contact/separation stroke for probe platen
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Wafer temp verified <4.5 K (with 44 RF probes in contact)
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Magnetic field suppression to <200 nT
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Easy exchange of customizable probe cards
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Configurable for 150 mm, 200 mm and 300 mm wafers
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Options for fully automated wafer load or manual
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Complete software suite for manual, semi-auto, or fully automated probing
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25 wafer cassette capacity for fully automated testing
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~15 minute cooldown time per wafer
See more Key Features in Specifications & Details tab
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