Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight A-LFNA for On-wafer R&D Advanced Low-Frequency Noise Measurements

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PNA for On-wafer R&D Measurements from RF to millimeter wave to Terahertz

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight PDA for On-wafer R&D Power Semiconductor Device Characterization Measurements

Comprehensive, Turn-key Integrated Measurement System (IMS) with Keysight Photonics Application

Lithographic thin-film construction Excellent crosstalk characteristics Non-oxidizing nickel alloy tips Innovative force delivery mechanism 40GHz, 50GHz, 67GHz, 110GHz and 145GHz connectors available GSG, SG, GS, GSGSG, GSSG, SGS configurations 50 to 250 µm pitches (other pitches available on request) High current version (2 A) available Advantages

Probe loss is 3 dB typical between 140 and 200 GHz, S11/S22 15 dB typical Reduced unwanted couplings and transmission modes Able to shrink pad geometries to 25 x 35 µm (best case) Typical contact resistance < 0.05 Ω on Al, < 0.02 Ω on Au WR15, WR12, WR10, WR8, WR6, WR4, WR3, and WR2 bands available.

Customizable configuration up to 25 contacts: RF, Eye-Pass power, ground, logic Lithographically-defined tips allow automated over temperature measurement on pads as small as 30 µm x 50 µm Low and repeatable contact resistance on aluminum pads (< 0.05 Ω) ensures accurate results Durable probe structure ensures more than 250,000 contacts Able to measure from -40°C to +125°C without compromising performance or accuracy of specifications

Next Generation Wafer Probing Continues the Infinity family’s Industry leading electrical performance High temperature capability (175° C +) for automotive device characterization and other applications Better tip visibility for enhanced placement accuracy and repeatability Improved tip life/durability with solid rhodium contacts New tip architecture enables support for narrower pitches (e.g. 25um) Advanced mechanical design combined with small contacts enables probing on smaller pads/pitches and improves durability and robustness

The LWP series Lightwave Probe enables optical measurements for on-wafer and hybrid photonics devices. It features user replaceable fiber pigtails allowing the probe to be optimized for a variety of light delivery and light collection applications including the characterization of topside illuminated photodiodes, Vertical Cavity Surface Emitting Lasers (VCSELs), hybrid transmitters and receivers, and LEDs.

Flexibility Ideal for a wide range of applications such as RF, mm-Wave and sub-THz characterization, FA, DWC, MEMS, optoelectronic tests and WL Re-configurable and upgradable as requirements grow Minimizes setup times with no loss in performance or accuracy Seamless integration of various measurement instruments Stability Solid station frame Built-in vibration-isolation solution for superior vibration attenuation Rigid microscope bridge Compact and rigid mechanical design Highly accurate measurement results Incorporates best-known methods Ease of Use

Ideal for multiport RF/Microwave and high-speed digital signal testing Mix DC and RF/Microwave signals on one probe Long lifetime – typically over one million (1,000,000) touchdowns Excellent performance in temperatures ranging from 10 K to 200°C Probe on any pad material with no damage

Substrate material: High-resistivity silicon Substrate thickness: 275 µm Dielectric constant: 11.8 Nominal Z0: 50 Ω